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原位温度(衬底和薄膜)监测系统BandiT 必要性

发布者::admin   发布时间: :2015-04-02 16:25 浏览次数: :

原位温度(衬底和薄膜)监测系统BandiT

内容简介:2015年第一季度,kSA BandiT原位温度(衬底和薄膜)监测系统销售量增长34%,这一业绩让我们深刻的意识到薄膜沉积/生长过程中的精确温度监测对研究人员是至关重要的,特别是,在传统高温计等原位温度测试方法无法检测的常温-200°C范围和优于+/-2°C的温度测试精度。并且,在2014年,kSA BandiT的相关测试结果成功发表在Journal of  Electronic Materials, Journal of Crystal Growth, Journal of Vacuum Science and Technology B, Optics Express等国际知名期, 主要研究的材料包括GaAs, InGaAs, InAs, InAlAs, HgCdTe。涉及的kSA BandiT系统的测试功能包括温度( temperature, 薄膜厚度(film thickness, 表面均匀度(surface roughness, 和薄膜生长速率(growth rate)。

    April 1, 2015 (DEXTER, MI) - k-Space Associates, Inc., a leader in thin-film metrology tools for the semiconductor, compound semiconductor and solar markets, has announced increased sales of 34% for 1st quarter sales of 2015 over 2014 for their patented kSA BandiT wafer and film temperature monitoring system.  The kSA BandiT technology utilizes the inherent temperature dependence of a semiconductor’s bandgap to directly measure temperature.  Because of its immunity to sources of measurement errors typical with pyrometers, and its ability to measure at temperatures below 200 °C, the kSA BandiT is a preferred temperature monitoring tool worldwide for both research facilities and epi-wafer manufacturers.

     “Our customers place a high value on the information kSA BandiT can provide in real time during growth, especially in the low temperature regime where other temperature measurement methods fail,” commented Barry Wissman, Product Development Engineer at k-Space.  “We are selling systems configured to measure a wide range of semiconductor band gaps, from GaN at approximately 380 nm to CdTe at approximately 830 nm, to our best-selling systems that operate in the near infrared for materials like GaAs and InP.”

    The kSA BandiT has recently been highlighted in several journal publications, such as Journal of Electronic Materials, Journal of Crystal Growth, Journal of Vacuum Science and Technology B, and Optics Express. In these articles, scientists worked with materials such as GaAs, InGaAs, InAs, InAlAs, and HgCdTe, allowing real-time measurement of variables such as temperature, film thickness, surface roughness, and growth rate. 

    In Journal of Electronic Materials, Dr. Jan Wenisch of AIM INFRAROT-MODULE GmbH noted that for growth of HgCdTe on GaAs “it was observed that an increase in growth temperature of only 2°C led to an increase in the cadmium fraction of almost 5% for Cd rich compositions”, and that “the strong influence of growth temperature [on Cd fraction] shows that it is especially important to have an accurate and reliable temperature measurement system.” [1] This result demonstrates the power of the kSA BandiT for reliable, reproducible temperature measurements below 200°C.

[1] Wenisch, J., et al. in Journal of Electronic Materials (2015): 1-5.

About k-Space Associates, Inc.

k-Space Associates, Inc. (www.k-space.com) is a leading supplier of advanced instrumentation and software for the surface science and thin-film technology industries.  Founded in 1992, its systems are used for monitoring wafer temperature, thin-film stress, deposition rate, thickness, material absorption properties, and Reflection High Energy Electron Diffraction (RHEED).   Backed by a commitment to ongoing support, these solutions are currently used worldwide in research and production line monitoring of compound semiconductor-based electronic, optoelectronic, and photovoltaic devices.    Extensive input and close collaboration with its worldwide customer base has led to the development of today’s most powerful thin-film characterization products.


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